|* Over 95% of silicon wafers used in the semiconductor industry is produced through the Czochralski method.
The Czochralski method involves melting bulk silicon in a quartz crucible and injecting a seed, after which both the seed and crucible are rotated as the crystal is grown during seed pulling.
Crystal defects result from various factors in the Czochralski method, which are influenced by flow patterns within the silicon melt, such as temperature changes near the interface, temperature profiles within the crystal, and thermal stress in the growing crystal.
Therefore, understanding the heat transfer mechanisms and temperature distributions within the melt provides a promising way to understand and solve issues of crystal defects.
||Material Properties and of SiC|
|Breakdown Field@ 1017㎝-3(MV/㎝)
|Electron Mobility@ 1016㎝-3(㎝2/V-s)
|Saturated ElectronDrift Velocity (㎝/s)
|Thermal Conductivity (W/㎝-K)
|Hole Mobility@ 1016㎝-3 (cm2/V-s)
||Applications of SiC wafer|
|* Compared to silicon, which is the most common material currently used in semiconductor applications, Silicon Carbide possesses properties such as a wide bandgap, high breakdown field, and high thermal conductivity.|
* These properties make Silicon carbide an ideal candidate for applications in High Power and High Frequency Devices.
||Physical Phenomena for Simulation|
|* Currently, the greatest obstacle to effective use of Silicon Carbide is the difficulty involved in obtaining high-quality single crystals.|
* Therefore, in our laboratory, we use numerical modeling techniques to analyze the sublimation growth process of silicon carbide.
* The numerical modeling techniques take into account calculations of the physical phenomena listed in the figure to the left.
* Results obtained from these simulations are applied to actual processing procedures, in order to optimize the growth process for high-quality single crystals.